Title :
Low-threshold, low beam divergence GaSb-based quantum-well diode-lasers emitting in the 1.9 to 2.4 μm wavelength range
Author :
Rattunde, M. ; Geerlings, E. ; Hülsmann, A. ; Schmitz, J. ; Kaufel, G. ; Wagner, J.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
Here we will present a new design for the vertical waveguide structure of (AlGaIn)(AsSb)-based diode lasers leading to a reduced beam divergence in the fast axis of only 44° full width at half maximum (FWHM), compared to 67° FWHM of a standard broad waveguide design. Uncoated ridge-waveguide diode lasers emitting at 2.3 μm with a 1000×64 μm2 geometry showed a threshold current density of 180 A/cm2 (or 60 A/cm2 per QW), which is among the lowest values, reported for GaSb-based diode lasers.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; quantum well lasers; ridge waveguides; semiconductor quantum wells; waveguide lasers; (AlGaIn)(AsSb); 2.3 micron; FWHM; beam divergence; current density; full width half maximum; quantum-well diode-laser; uncoated ridge-waveguide diode laser; vertical waveguide structure; Diode lasers; Gas lasers; Laser beams; Laser tuning; Optical coupling; Optical design; Optical waveguides; Quantum wells; Threshold current; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN :
0-7803-8974-3
DOI :
10.1109/CLEOE.2005.1567886
