A New 100A, 500V Power MOSFET Module with Un-Precedented di/dt, dv/dt Endurance

A new 100A, 500V n-channel enhancement mode power MOSFET module is introduced in this paper. In the introduction an overview on the existing devices has been given. The nunerous merits of the new device are illustrated by means of various static and dynamic characteristics. The classic problem of intrinsic bipolar action, which leads to destruction of power MOSFET have been discussed. The new device has shown a very high level of ruggednes against di/dt, dv/dt stress besides low on-resistance, fast switching speed and other superior characteristics.