DocumentCode :
2894591
Title :
Optimal Body Biasing for Minimum Leakage Power in Standby Mode
Author :
Kim, Kyung Ki ; Kim, Yong-Bin
Author_Institution :
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA
fYear :
2007
fDate :
27-30 May 2007
Firstpage :
1161
Lastpage :
1164
Abstract :
This paper describes a new power minimizing method by optimizing supply voltage control and minimizing leakage in active and standby modes, respectively. In the active mode, the control system determines the optimal trade-off between supply voltage and the forward body bias voltage to satisfy the performance requirement. In the standby mode, a new optimal body-bias technique in nanoscale CMOS technology is implemented to monitor subthreshold, gate tunneling, and band-to-band tunneling leakage current and reduce leakage current by optimal substrate bias voltage(forward of reverse biasing). The optimal body bias control system reduces the leakage current by up to 1000 times for ISCAS85 benchmark circuits designed using 32nm CMOS technology
Keywords :
CMOS integrated circuits; leakage currents; nanotechnology; voltage control; 32 nm; band-to-band tunneling leakage current; gate tunneling; nanoscale CMOS technology; optimal body bias control system; optimal body bias technique; optimal substrate bias voltage; power minimizing method; supply voltage control; CMOS technology; Circuits; Delay; Dynamic voltage scaling; Leakage current; Monitoring; Optimal control; Power dissipation; Threshold voltage; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location :
New Orleans, LA
Print_ISBN :
1-4244-0920-9
Electronic_ISBN :
1-4244-0921-7
Type :
conf
DOI :
10.1109/ISCAS.2007.378256
Filename :
4252846
Link To Document :
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