Title :
A circuit and noise model of the field-effect transistor
Author_Institution :
Stanford Electronics Laboratory, Stanford, CA, USA
Keywords :
Circuit noise; Cutoff frequency; Distributed parameter circuits; FETs; Laboratories; Low-frequency noise; Noise figure; Noise generators; Noise measurement; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1963 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1963.1157484
