• DocumentCode
    2894889
  • Title

    5 W high-efficiency high-brightness tapered diode lasers at 980 nm

  • Author

    Weber, Jürgen ; Kelemen, Marc Tibor ; Mikulla, Michael ; Weimann, Günter

  • Author_Institution
    Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
  • fYear
    2005
  • fDate
    12-17 June 2005
  • Firstpage
    114
  • Abstract
    Tapered diode lasers in external resonator configuration are suitable for applications such as frequency conversion or non-linear spectroscopy were narrow linewidth in combination with high output power is needed. In order to increase the brightness it is necessary to make the output power and the efficiency comparable to broad area lasers and simultaneously keep the beam quality nearly diffraction limited. For this purpose we have grown low modal gain, single quantum well InGaAs/AlGaAs devices emitting at 980 nm by molecular beam epitaxy. As an example of a tapered laser with an overall length of 3.5 mm, we achieved an optical output power of more than 5 W in continuous wave mode (cw).
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; molecular beam epitaxial growth; quantum well devices; semiconductor lasers; 3.5 mm; 5 W; 980 nm; InGaAs-AlGaAs; beam quality; broad area lasers; continuous wave mode; external resonator configuration; frequency conversion; modal gain; molecular beam epitaxy; nonlinear spectroscopy; single quantum well device; tapered diode lasers; Brightness; Diode lasers; Frequency conversion; Laser beams; Molecular beam epitaxial growth; Optical resonators; Power generation; Power lasers; Quantum well lasers; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
  • Print_ISBN
    0-7803-8974-3
  • Type

    conf

  • DOI
    10.1109/CLEOE.2005.1567902
  • Filename
    1567902