DocumentCode
2894889
Title
5 W high-efficiency high-brightness tapered diode lasers at 980 nm
Author
Weber, Jürgen ; Kelemen, Marc Tibor ; Mikulla, Michael ; Weimann, Günter
Author_Institution
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
fYear
2005
fDate
12-17 June 2005
Firstpage
114
Abstract
Tapered diode lasers in external resonator configuration are suitable for applications such as frequency conversion or non-linear spectroscopy were narrow linewidth in combination with high output power is needed. In order to increase the brightness it is necessary to make the output power and the efficiency comparable to broad area lasers and simultaneously keep the beam quality nearly diffraction limited. For this purpose we have grown low modal gain, single quantum well InGaAs/AlGaAs devices emitting at 980 nm by molecular beam epitaxy. As an example of a tapered laser with an overall length of 3.5 mm, we achieved an optical output power of more than 5 W in continuous wave mode (cw).
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; molecular beam epitaxial growth; quantum well devices; semiconductor lasers; 3.5 mm; 5 W; 980 nm; InGaAs-AlGaAs; beam quality; broad area lasers; continuous wave mode; external resonator configuration; frequency conversion; modal gain; molecular beam epitaxy; nonlinear spectroscopy; single quantum well device; tapered diode lasers; Brightness; Diode lasers; Frequency conversion; Laser beams; Molecular beam epitaxial growth; Optical resonators; Power generation; Power lasers; Quantum well lasers; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN
0-7803-8974-3
Type
conf
DOI
10.1109/CLEOE.2005.1567902
Filename
1567902
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