DocumentCode
2894895
Title
A 120GHz 10Gb/s phase-modulating transmitter in 65nm LP CMOS
Author
Deferm, Noël ; Reynaert, Patrick
Author_Institution
KU Leuven, Leuven, Belgium
fYear
2011
fDate
20-24 Feb. 2011
Firstpage
290
Lastpage
292
Abstract
This paper presents a 120GHz fully integrated 65nm low power (LP) CMOS transmitter that achieves data rates above 10Gb/s. At these high frequencies an extremely high bandwidth is available. This allows multi-gigabit-per-second communication which provides an answer to the ever-increasing demand for higher data rates in wireless systems. However, wideband modulation of a 120GHz signal in 65nm LP CMOS is a challenge.
Keywords
CMOS integrated circuits; low-power electronics; phase modulation; radio transmitters; LPCMOS; bit rate 10 Gbit/s; frequency 120 GHz; fully integrated low power CMOS transmitter; multigigabit-per-second communication; phase-modulating transmitter; size 65 nm; wideband signal modulation; wireless system; CMOS integrated circuits; Couplers; Multiplexing; Phase shift keying; Power transmission lines; Transmission line measurements; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-61284-303-2
Type
conf
DOI
10.1109/ISSCC.2011.5746323
Filename
5746323
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