Title :
Implementation of INGaP/GaAs HBT MMIC PA with Gain-Expansion Drive-Amplifier and Doherty Structure
Author :
Jeong-Seok Jang ; Kyoung-hak Lee
Author_Institution :
Navaid Div., NorthStar Syst., Anyang, South Korea
Abstract :
In this paper, performance improvement of MMIC Power Amplifier using InGaP/GaAs HBT process is studied. To meet 3.9G and 4G mobile communications service demand, a power amplifier with improved efficiency and linearity that utilizes the Doherty structure and gain-expansion drive-amplifier is designed and implemented. In the measurement results, proposed amplifier has P1dB of 27.3dBm, efficiency of 15.2%@10dB back-off and OIP3 of 48.5.
Keywords :
III-V semiconductors; MMIC power amplifiers; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; indium compounds; 3.9G mobile communications; 4G mobile communications; Doherty structure; HBT MMIC power amplifier; InGaP-GaAs; efficiency 15.2 percent; gain expansion drive amplifier; Gallium arsenide; Heterojunction bipolar transistors; Linearity; MMICs; Power amplifiers; Power generation; Semiconductor device measurement;
Conference_Titel :
Information Science and Applications (ICISA), 2013 International Conference on
Conference_Location :
Suwon
Print_ISBN :
978-1-4799-0602-4
DOI :
10.1109/ICISA.2013.6579504
