Title :
Macroscopic theory and numerical modelling of carrier transport and leakage effects in semiconductor laser heterostructures
Author :
Zakhleniuk, N.A. ; Adams, M.J.
Author_Institution :
Dept. of Electron. Syst. Eng., Essex Univ., Colchester, UK
Abstract :
In this report we present the results of both analytical theory and numerical modelling of electron/hole transport in InP/InGaAsP long-wavelength lasers. For numerical simulation we use the ISE-AG commercial software package DESSIS. The efficiency of carrier injection into the active region (AR) as well as the leakage currents of electrons and holes out of this region determine the main power characteristics and performance of semiconductor laser heterodiodes.
Keywords :
III-V semiconductors; electron mobility; gallium arsenide; hole mobility; indium compounds; leakage currents; semiconductor diodes; semiconductor heterojunctions; semiconductor lasers; DESSIS; ISE-AG commercial software package; InP-InGaAsP; InP/InGaAsP long-wavelength lasers; carrier transport; electron/hole transport; leakage effect; macroscopic theory; numerical modelling; semiconductor laser heterostructures; Charge carrier processes; Indium phosphide; Laser modes; Laser theory; Leakage current; Numerical models; Numerical simulation; Power lasers; Semiconductor lasers; Software packages;
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN :
0-7803-8974-3
DOI :
10.1109/CLEOE.2005.1567924
