• DocumentCode
    2895409
  • Title

    High-power Al-free active region ridge laser diodes for atomic clocks

  • Author

    Vermersch, F.-J.. ; Lecomte, M. ; Calligaro, M. ; Parilland, O. ; Bansropun, S. ; Krakowski, M.

  • Author_Institution
    Alcatel Thales III-V Lab, Orsay, France
  • fYear
    2005
  • fDate
    12-17 June 2005
  • Firstpage
    139
  • Abstract
    We have developed 852 nm laser structures, using an aluminium free active region. For an AR/HR coated ridge device, we have obtained an optical power of 320 mW in a single spatial mode with the beam quality parameter M2=1.5.
  • Keywords
    aluminium; atomic clocks; semiconductor lasers; 320 mW; 852 nm; AR/HR coated ridge device; Al; Al-free active region; atomic clocks; beam quality parameter; ridge laser diodes; Aluminum; Atom optics; Atomic clocks; Diode lasers; Distributed feedback devices; Optical devices; Optical feedback; Optical interferometry; Optical pumping; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
  • Print_ISBN
    0-7803-8974-3
  • Type

    conf

  • DOI
    10.1109/CLEOE.2005.1567927
  • Filename
    1567927
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2895409