Title :
Invited: A review of PN junction lasers
Author_Institution :
General Electric Company, Schenectady, NY, USA
Keywords :
Absorption; Circuits; Gallium arsenide; Gas lasers; Laboratories; Laser theory; Laser transitions; Laser tuning; Radiative recombination; Semiconductor lasers;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1964 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1964.1157528