A 300mm wafer-size CMOS image sensor with in-pixel voltage-gain amplifier and column-level differential readout circuitry

Author

Yamashita, Yuichiro ; Takahashi, Hidekazu ; Kikuchi, Shin ; Ota, Keisuke ; Fujita, Masato ; Hirayama, Satoshi ; Kanou, Taikan ; Hashimoto, Sakae ; Momma, Genzo ; Inoue, Shunsuke

Author_Institution

Canon, Kawasaki, Japan

fYear

2011

fDate

20-24 Feb. 2011

Firstpage

408

Lastpage

410

Abstract

In this paper, we describe the architecture of a wafer-size CMOS image sensor enabling to enlarge the size of the large-format sensor while maintaining good signal quality. The good signal quality is the key for a low-noise and high-frame rate image sensor. For this purpose, each pixel of our sensor has a programmable voltage amplifier. In addition, the differential readout circuitry on the column signal path ensures tolerance to common-mode noise and the drift of power/ground voltage.

Keywords

CMOS image sensors; amplifiers; column-level differential readout circuitry; common-mode noise; high-frame rate image sensor; in-pixel voltage-gain amplifier; low-noise image sensor; power-ground voltage; programmable voltage amplifier; signal quality; size 300 mm; wafer-size CMOS image sensor; CMOS image sensors; Conferences; Electronics packaging; Noise; Pixel; Sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

978-1-61284-303-2

Type

conf

DOI

10.1109/ISSCC.2011.5746373

Filename

5746373