DocumentCode
2896038
Title
Built-In Self-Repair Techniques for Heterogeneous Memory Cores
Author
Wang, Zhen-Yu ; Tsai, Yi-Ming ; Lu, Shyue-Kung
Author_Institution
Dept. of Electron. Eng., Fu-Jen Catholic Univ., Taipei, Taiwan
fYear
2009
fDate
16-18 Nov. 2009
Firstpage
69
Lastpage
74
Abstract
In this paper, BISR (built-in self-repair) techniques for heterogeneous multiple memory cores with divided redundancy mechanism are proposed. Redundant memories are partitioned into row blocks and column blocks and shared among all memory cores in the same memory group. Therefore, unlike the traditional redundancy mechanism, a row (column) block is used as the basic replacement element. Based on the proposed divided redundancy mechanism, a heuristic heterogeneous extended spare pivoting (HESP) redundancy analysis algorithm suitable for built-in implementation is also proposed. Experimental results show that repair rates can be improved significantly due to the efficient usage of redundancy. Moreover, the area overhead of the BISR circuitry for an example with four memory instances is only 1.12%.
Keywords
DRAM chips; built-in self test; BISR; built-in implementation; built-in self-repair techniques; column blocks; divided redundancy mechanism; heterogeneous memory cores; heuristic heterogeneous extended spare pivoting; redundancy analysis algorithm; row blocks; Algorithm design and analysis; Built-in self-test; Circuit faults; Fault detection; Hardware; Information analysis; Random access memory; Redundancy; Semiconductor device manufacture; Testing; BISR; Reliability; Yield; memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Dependable Computing, 2009. PRDC '09. 15th IEEE Pacific Rim International Symposium on
Conference_Location
Shanghai
Print_ISBN
978-0-7695-3849-5
Type
conf
DOI
10.1109/PRDC.2009.19
Filename
5368218
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