Title :
A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking
Author :
Kim, Jung-Sik ; Oh, Chi Sung ; Lee, Hocheol ; Lee, Donghyuk ; Hwang, Hyong-Ryol ; Hwang, Sooman ; Na, Byongwook ; Moon, Joungwook ; Kim, Jin-Guk ; Park, Hanna ; Ryu, Jang-Woo ; Park, Kiwon ; Kang, Sang-Kyu ; Kim, So-Young ; Kim, Hoyoung ; Bang, Jong-Min ;
Author_Institution :
Samsung Electron., Hwasung, South Korea
Abstract :
Mobile DRAM is widely employed in portable electronic devices due to its fea ture of low power consumption. Recently, as the market trend renders integra tion of various features in one chip, mobile DRAM is required to have not only low power consumption but also high capacity and high speed. To attain these goals in mobile DRAM, we designed a 1Gb single data rate (SDR) Wide-I/O mobile SDRAM with 4 channels and 512 DQ pins, featuring 12.8GB/S data band width.
Keywords :
DRAM chips; low-power electronics; three-dimensional integrated circuits; TSV-based stacking; byte rate 12.8 GByte/s; low power consumption; mobile wide-I/O DRAM; portable electronic devices; single data rate; storage capacity 1 Gbit; storage capacity 2 Gbit; voltage 1.2 V; wide-I/O mobile SDRAM; Arrays; Clocks; Mobile communication; Pins; Random access memory; Registers; Timing;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-61284-303-2
DOI :
10.1109/ISSCC.2011.5746413
