Title :
A low noise integrated unibi amplifier with novel biasing scheme and structure
Author :
Lin, Huiming ; Karcher, E.
Author_Institution :
Westinghouse Electric Corp., Baltimore, MD, USA
Keywords :
Bipolar transistors; Capacitors; Circuit noise; Diodes; Epitaxial layers; FETs; Fabrication; Impedance; Low-noise amplifiers; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1965 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1965.1157582
