Title :
Ultrafast all-optical switching in semiconductor quantum wells and quantum dots
Author_Institution :
Dept. of Electr. & Electron. Eng., Kobe Univ., Japan
Abstract :
Semiconductor-based femtosecond all-optical switches being developed for optical communications are described. Switching beyond 100 Gb/s has been demonstrated by a variety of principles including intersubband transition in quantum wells and absorption recovery in quantum dots.
Keywords :
high-speed optical techniques; optical communication equipment; optical switches; semiconductor optical amplifiers; semiconductor quantum dots; semiconductor quantum wells; absorption recovery; femtosecond all-optical switch; intersubband transition; optical communication; semiconductor quantum dot; semiconductor quantum well; ultrafast all-optical switching; Absorption; Communication switching; Delay; Indium gallium arsenide; Optical switches; Polarization; Quantum dots; Semiconductor materials; Telecommunication switching; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN :
0-7803-8974-3
DOI :
10.1109/CLEOE.2005.1568006
