60-GHz voltage-controlled oscillator and frequency divider in 0.25-µm SiGe BiCMOS technology

Author

Jeong-Min Lee ; Woo-Young Choi ; Rucker, Holger

Author_Institution

Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea

fYear

2012

fDate

4-7 Nov. 2012

Firstpage

65

Lastpage

67

Abstract

We present an integrated 60-GHz voltage-controlled oscillator (VCO) and frequency divider (FD) chain in a 0.25-μm SiGe BiCMOS technology. To achieve the wide tuning range, the VCO employs a differential Colpitts configuration and the FD is a regenerative type based on Gilbert-cell mixer and bandpass filter. The VCO-FD chain achieves the tuning range from 54 to 63 GHz and the phase noise of -96.5 dBc/Hz at 1-MHz offset. The power consumption is 46 mW with supply voltage of 3.3 V excluding output buffers.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; band-pass filters; frequency dividers; low-power electronics; mixers (circuits); voltage-controlled oscillators; Gilbert-cell mixer; SiGe BiCMOS technology; VCO; bandpass filter; differential Colpitts configuration; frequency 54 GHz to 60 GHz; frequency divider; power 46 mW; size 0.25 mum; voltage 3.3 V; voltage-controlled oscillator; Frequency conversion; Frequency measurement; Phase noise; Power generation; Tuning; Voltage-controlled oscillators; Colpitts voltage-controlled oscillator (VCO); SiGe BiCMOS; regeneartive frequency divider (FD); wide tuning;

fLanguage

English

Publisher

ieee

Conference_Titel

SoC Design Conference (ISOCC), 2012 International

Conference_Location

Jeju Island

Print_ISBN

978-1-4673-2989-7

Electronic_ISBN

978-1-4673-2988-0

Type

conf

DOI

10.1109/ISOCC.2012.6406991

Filename

6406991