Physical modelling for uniformity control of rapid thermal processes

Author

Dilhac, Jean-marie ; Nolhier, Nicolas ; Ganibal, Christian

Author_Institution

Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France

fYear

1993

fDate

17-20 Oct 1993

Firstpage

7

Abstract

In this paper, we first present a simulation tool to calculate, in two dimensions, a 4" Si wafer irradiation distribution. Then, the heat diffusion equation is numerically solved in two dimensions, and thermal maps of the wafer are given vs. various hardware arrangements. Finally, the incorporation of thermal modeling into a control procedure is presented and discussed

Keywords

digital simulation; integrated circuit manufacture; process control; rapid thermal processing; semiconductor process modelling; temperature control; 4 in; Si; Si wafer irradiation distribution; control procedure; hardware arrangements; heat diffusion equation; process control; rapid thermal processes; simulation tool; thermal maps; thermal modeling; uniformity control; Equations; Hardware; Lamps; Lighting; Rapid thermal processing; Semiconductor device modeling; Solid modeling; Temperature measurement; Temperature sensors; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Systems, Man and Cybernetics, 1993. 'Systems Engineering in the Service of Humans', Conference Proceedings., International Conference on

Conference_Location

Le Touquet

Print_ISBN

0-7803-0911-1

Type

conf

DOI

10.1109/ICSMC.1993.384842

Filename

384842