Title :
Physical modelling for uniformity control of rapid thermal processes
Author :
Dilhac, Jean-marie ; Nolhier, Nicolas ; Ganibal, Christian
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
Abstract :
In this paper, we first present a simulation tool to calculate, in two dimensions, a 4" Si wafer irradiation distribution. Then, the heat diffusion equation is numerically solved in two dimensions, and thermal maps of the wafer are given vs. various hardware arrangements. Finally, the incorporation of thermal modeling into a control procedure is presented and discussed
Keywords :
digital simulation; integrated circuit manufacture; process control; rapid thermal processing; semiconductor process modelling; temperature control; 4 in; Si; Si wafer irradiation distribution; control procedure; hardware arrangements; heat diffusion equation; process control; rapid thermal processes; simulation tool; thermal maps; thermal modeling; uniformity control; Equations; Hardware; Lamps; Lighting; Rapid thermal processing; Semiconductor device modeling; Solid modeling; Temperature measurement; Temperature sensors; Thermal stresses;
Conference_Titel :
Systems, Man and Cybernetics, 1993. 'Systems Engineering in the Service of Humans', Conference Proceedings., International Conference on
Conference_Location :
Le Touquet
Print_ISBN :
0-7803-0911-1
DOI :
10.1109/ICSMC.1993.384842
