DocumentCode
2897049
Title
Solid-immersion imaging of a silicon flip-chip with a resolution of 325 nm using the optical-beam induced current method
Author
Ramsay, E. ; Pleynet, N. ; Xiao, D. ; Warburton, R.J. ; Reid, D.T.
Author_Institution
Ultrafast Optics Group, Heriot-Watt Univ., Edinburgh, UK
fYear
2005
fDate
12-17 June 2005
Firstpage
236
Abstract
We report high resolution solid-immersion sub-surface imaging of a flip-chip by detecting the two-photon photocurrent generated by a 1530 nm femtosecond Er:fiber laser. Features show high contrast and a resolution of 325 nm.
Keywords
elemental semiconductors; fibre lasers; flip-chip devices; high-speed optical techniques; measurement by laser beam; optical microscopy; semiconductor devices; silicon; two-photon processes; 1530 nm; Si; femtosecond Er:fiber laser; optical microscopy; optical-beam induced current method; silicon flip-chip; solid-immersion sub-surface imaging; two-photon photocurrent; High-resolution imaging; Image resolution; Lenses; Microscopy; Optical imaging; Semiconductor lasers; Silicon; Solids; Spatial resolution; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN
0-7803-8974-3
Type
conf
DOI
10.1109/CLEOE.2005.1568022
Filename
1568022
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