DocumentCode :
28971
Title :
Towards in vivo biosensors for low-cost protein sensing
Author :
Ramesh, Archana ; Ren, Fengyuan ; Berger, P.R. ; Casal, Patricia ; Theiss, A. ; Gupta, Swastik ; Lee, S.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
Volume :
49
Issue :
7
fYear :
2013
fDate :
March 28 2013
Firstpage :
450
Lastpage :
451
Abstract :
In vivo biosensing requires stable transistor operation in high-salt concentration bodily fluids while exhibiting impermeability to mobile alkali ions that would otherwise render the metal-oxide-semiconductor (MOS) threshold voltage to drift. Metal oxide semiconductor capacitor structures using Al2O3 as the gate dielectric were soaked in a sterile physiological buffer solution (PBS) up to 24 hours and for thicknesses from 100 to 10 nm. The triangular voltage sweep technique characterised alkali ion penetration, and measured no detectable alkali ions for the Al2O3 capacitors. By contrast, the dose of alkali ions in silicon dioxide MOS capacitors steadily increased with increasing soak times in the PBS solution.
Keywords :
MOS capacitors; biochemistry; biosensors; elemental semiconductors; molecular biophysics; nanoelectronics; nanofabrication; permeability; proteins; silicon compounds; transistors; Al2O3 capacitors; PBS solution; SiO2; alkali ion dose; alkali ion penetration; detectable alkali ions; gate dielectric; high-salt concentration bodily fluids; impermeability; in vivo biosensors; metal oxide semiconductor capacitor; metal-oxide-semiconductor; mobile alkali ions; protein sensing; silicon dioxide MOS capacitors; size 100 nm to 10 nm; sterile physiological buffer solution; threshold voltage; transistor operation; triangular voltage sweep technique;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2012.4283
Filename :
6504957
Link To Document :
بازگشت