Title :
Research progress of high peak power klystron in China
Author :
Wang, Yong ; Zhang, Rui ; Liu, Wenxin ; Liu, Pukun
Author_Institution :
Key Lab. of High Power Microwave Sources & Technol., Inst. of Electron., Beijing, China
Abstract :
In China, the R&D of high peak power klystron has been made much progress in recent years. In 2010, the Institute of Electronics, Chinese Academy of Sciences (IECAS) has successfully developed S-band 100MW klystron, and, currently, are developing an S-band 150MW klystron. The Institute of High Energy Physics, Chinese Academy of Sciences (IHEP) cooperated with the Hang Guang Electrical Factory has developed S-band 65MW klystron. In this paper, the specifications of our typical high peak power klystrons are presented and the key technical problems for developing this kind of klystron will be discussed in this conference.
Keywords :
klystrons; China; Hang Guang Electrical Factory; IECAS; IHEP; Institute of Electronics, Chinese Academy of Sciences; Institute of High Energy Physics, Chinese Academy of Sciences; S-band klystron; high peak power klystron; power 100 MW; power 150 MW; power 65 MW; Klystrons; Optical waveguides; Power generation; Production facilities; Radio frequency; S-band; high peak power; research progress klystron;
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2012 IEEE Thirteenth International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-0188-6
Electronic_ISBN :
978-1-4673-0187-9
DOI :
10.1109/IVEC.2012.6262073
