Research progress of high peak power klystron in China

Author

Wang, Yong ; Zhang, Rui ; Liu, Wenxin ; Liu, Pukun

Author_Institution

Key Lab. of High Power Microwave Sources & Technol., Inst. of Electron., Beijing, China

fYear

2012

fDate

24-26 April 2012

Firstpage

59

Lastpage

60

Abstract

In China, the R&D of high peak power klystron has been made much progress in recent years. In 2010, the Institute of Electronics, Chinese Academy of Sciences (IECAS) has successfully developed S-band 100MW klystron, and, currently, are developing an S-band 150MW klystron. The Institute of High Energy Physics, Chinese Academy of Sciences (IHEP) cooperated with the Hang Guang Electrical Factory has developed S-band 65MW klystron. In this paper, the specifications of our typical high peak power klystrons are presented and the key technical problems for developing this kind of klystron will be discussed in this conference.

Keywords

klystrons; China; Hang Guang Electrical Factory; IECAS; IHEP; Institute of Electronics, Chinese Academy of Sciences; Institute of High Energy Physics, Chinese Academy of Sciences; S-band klystron; high peak power klystron; power 100 MW; power 150 MW; power 65 MW; Klystrons; Optical waveguides; Power generation; Production facilities; Radio frequency; S-band; high peak power; research progress klystron;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electronics Conference (IVEC), 2012 IEEE Thirteenth International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4673-0188-6

Electronic_ISBN

978-1-4673-0187-9

Type

conf

DOI

10.1109/IVEC.2012.6262073

Filename

6262073