DocumentCode

2897172

Title

The use of insulated-gate field-effect transistors in digital storage systems

Author

Wood, Jo ; Ball, Roy

Author_Institution

Royal Radar Establishment, Great Malvern, England

Volume

VIII

fYear

1965

fDate

17-19 Feb. 1965

Firstpage

82

Lastpage

83

Keywords

Delay lines; Energy consumption; FETs; Impedance; Insulation; Inverters; Radar; Substrates; Switches; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1965 IEEE International

Conference_Location

Philadelphia, PA, USA

Type

conf

DOI

10.1109/ISSCC.1965.1157606

Filename

1157606