DocumentCode :
2897172
Title :
The use of insulated-gate field-effect transistors in digital storage systems
Author :
Wood, Jo ; Ball, Roy
Author_Institution :
Royal Radar Establishment, Great Malvern, England
Volume :
VIII
fYear :
1965
fDate :
17-19 Feb. 1965
Firstpage :
82
Lastpage :
83
Keywords :
Delay lines; Energy consumption; FETs; Impedance; Insulation; Inverters; Radar; Substrates; Switches; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1965 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1965.1157606
Filename :
1157606
Link To Document :
بازگشت