Title :
Avalanche luminescence in silicon and its utilization in a monolithic light source array
Author_Institution :
Fairchild Semiconductor, Palo Alto, CA
Keywords :
Avalanche breakdown; Breakdown voltage; Doping; Geometry; Light sources; Luminescence; Microscopy; Optical arrays; P-n junctions; Silicon;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1965 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1965.1157614
