DocumentCode :
2897423
Title :
Enhanced field emission from ZnO/CNT nanostructure with minimized screening effect
Author :
Ding, Shuyi ; Li, Chi ; Lei, Wei ; Zhang, Xiaobing ; Wang, Baoping
Author_Institution :
Display Reseach Center, Southeast Univ., Nanjing, China
fYear :
2012
fDate :
24-26 April 2012
Firstpage :
99
Lastpage :
100
Abstract :
Zinc oxide nanowires (ZNWs) are grown on vertically-aligned carbon nanotubes (CNTs) by vapor phase transport method. Field emission properties of these nanowires have been studied and then compared with similar nanowires fabricated on flat silica substrates. This composed nanostructure has minimized the field-screening effects provoked by the proximity of neighbour tubes. This work demonstrates that the field emission properties were substantially stable at a pressure of 5×10-6 mbar without exhibiting any current degradation for a constant external field, with an emitting current density of ~1 mA/cm2.
Keywords :
carbon nanotubes; current density; field emission; nanowires; photolithography; wide band gap semiconductors; zinc compounds; CNT nanostructure; ZnO; constant external field; emitting current density; enhanced field emission; field emission properties; field-screening effects; flat silica substrates; minimized screening effect; vapor phase transport method; zinc oxide nanowires; Arrays; Electric fields; Iron; Nanowires; Substrates; Sun; Zinc oxide; CNTs; Zno; field emission; photolithography; screening effects; threshold field; vapor phase transport;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2012 IEEE Thirteenth International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-0188-6
Electronic_ISBN :
978-1-4673-0187-9
Type :
conf
DOI :
10.1109/IVEC.2012.6262088
Filename :
6262088
Link To Document :
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