• DocumentCode
    2897423
  • Title

    Enhanced field emission from ZnO/CNT nanostructure with minimized screening effect

  • Author

    Ding, Shuyi ; Li, Chi ; Lei, Wei ; Zhang, Xiaobing ; Wang, Baoping

  • Author_Institution
    Display Reseach Center, Southeast Univ., Nanjing, China
  • fYear
    2012
  • fDate
    24-26 April 2012
  • Firstpage
    99
  • Lastpage
    100
  • Abstract
    Zinc oxide nanowires (ZNWs) are grown on vertically-aligned carbon nanotubes (CNTs) by vapor phase transport method. Field emission properties of these nanowires have been studied and then compared with similar nanowires fabricated on flat silica substrates. This composed nanostructure has minimized the field-screening effects provoked by the proximity of neighbour tubes. This work demonstrates that the field emission properties were substantially stable at a pressure of 5×10-6 mbar without exhibiting any current degradation for a constant external field, with an emitting current density of ~1 mA/cm2.
  • Keywords
    carbon nanotubes; current density; field emission; nanowires; photolithography; wide band gap semiconductors; zinc compounds; CNT nanostructure; ZnO; constant external field; emitting current density; enhanced field emission; field emission properties; field-screening effects; flat silica substrates; minimized screening effect; vapor phase transport method; zinc oxide nanowires; Arrays; Electric fields; Iron; Nanowires; Substrates; Sun; Zinc oxide; CNTs; Zno; field emission; photolithography; screening effects; threshold field; vapor phase transport;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electronics Conference (IVEC), 2012 IEEE Thirteenth International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4673-0188-6
  • Electronic_ISBN
    978-1-4673-0187-9
  • Type

    conf

  • DOI
    10.1109/IVEC.2012.6262088
  • Filename
    6262088