DocumentCode
2897423
Title
Enhanced field emission from ZnO/CNT nanostructure with minimized screening effect
Author
Ding, Shuyi ; Li, Chi ; Lei, Wei ; Zhang, Xiaobing ; Wang, Baoping
Author_Institution
Display Reseach Center, Southeast Univ., Nanjing, China
fYear
2012
fDate
24-26 April 2012
Firstpage
99
Lastpage
100
Abstract
Zinc oxide nanowires (ZNWs) are grown on vertically-aligned carbon nanotubes (CNTs) by vapor phase transport method. Field emission properties of these nanowires have been studied and then compared with similar nanowires fabricated on flat silica substrates. This composed nanostructure has minimized the field-screening effects provoked by the proximity of neighbour tubes. This work demonstrates that the field emission properties were substantially stable at a pressure of 5×10-6 mbar without exhibiting any current degradation for a constant external field, with an emitting current density of ~1 mA/cm2.
Keywords
carbon nanotubes; current density; field emission; nanowires; photolithography; wide band gap semiconductors; zinc compounds; CNT nanostructure; ZnO; constant external field; emitting current density; enhanced field emission; field emission properties; field-screening effects; flat silica substrates; minimized screening effect; vapor phase transport method; zinc oxide nanowires; Arrays; Electric fields; Iron; Nanowires; Substrates; Sun; Zinc oxide; CNTs; Zno; field emission; photolithography; screening effects; threshold field; vapor phase transport;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electronics Conference (IVEC), 2012 IEEE Thirteenth International
Conference_Location
Monterey, CA
Print_ISBN
978-1-4673-0188-6
Electronic_ISBN
978-1-4673-0187-9
Type
conf
DOI
10.1109/IVEC.2012.6262088
Filename
6262088
Link To Document