DocumentCode :
2897880
Title :
Combined excitation emission spectroscopy of Eu-doped GaN
Author :
Dierolf, Volkmar ; Fleischman, Zackery ; Sandmann, Christian ; Munasinghe, Chanaka ; Steckl, A.
Author_Institution :
Dept. of Phys., Lehigh Univ., Bethlehem, PA, USA
fYear :
2005
fDate :
12-17 June 2005
Firstpage :
290
Abstract :
In this contribution we address the first task by applying to the Eu:GaN material system the site-selective technique of combined excitation emission spectroscopy, in which a large number of emission spectra are recorded and a 2D data set of emission intensities as function of excitation and emission intensity is obtained.
Keywords :
III-V semiconductors; europium; gallium compounds; optical materials; photoluminescence; Eu-doped GaN material system; GaN:Eu; combined excitation emission spectroscopy; emission intensity; emission spectra; excitation function; site-selective technique; Electroluminescence; Energy states; Gallium nitride; Laser excitation; Nanoelectronics; Optical materials; Optical pumping; Pump lasers; Spectroscopy; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN :
0-7803-8974-3
Type :
conf
DOI :
10.1109/CLEOE.2005.1568074
Filename :
1568074
Link To Document :
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