• DocumentCode
    2897880
  • Title

    Combined excitation emission spectroscopy of Eu-doped GaN

  • Author

    Dierolf, Volkmar ; Fleischman, Zackery ; Sandmann, Christian ; Munasinghe, Chanaka ; Steckl, A.

  • Author_Institution
    Dept. of Phys., Lehigh Univ., Bethlehem, PA, USA
  • fYear
    2005
  • fDate
    12-17 June 2005
  • Firstpage
    290
  • Abstract
    In this contribution we address the first task by applying to the Eu:GaN material system the site-selective technique of combined excitation emission spectroscopy, in which a large number of emission spectra are recorded and a 2D data set of emission intensities as function of excitation and emission intensity is obtained.
  • Keywords
    III-V semiconductors; europium; gallium compounds; optical materials; photoluminescence; Eu-doped GaN material system; GaN:Eu; combined excitation emission spectroscopy; emission intensity; emission spectra; excitation function; site-selective technique; Electroluminescence; Energy states; Gallium nitride; Laser excitation; Nanoelectronics; Optical materials; Optical pumping; Pump lasers; Spectroscopy; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
  • Print_ISBN
    0-7803-8974-3
  • Type

    conf

  • DOI
    10.1109/CLEOE.2005.1568074
  • Filename
    1568074
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2897880