Title :
Fabrication of transparent p-n junction composed of heteroepitaxially grown p-Li0.15Ni0.85O and n-ZnO films for UV-detector applications
Author :
Zhuang, L. ; Wong, K.H.
Author_Institution :
Dept. of Appl. Phys., Hong Kong Polytech. Univ., Kowloon, China
Abstract :
In this article, we demonstrate the ability to create heterojunctions of p-type Li0.15Ni0.85O (LNO) and n-type ZnO films deposited by pulsed laser deposition (PLD) on sapphire and MgO substrate, using Pt contacts on the LNO film, which represents a combination of transparent conducting oxides (TCOs) with simple crystal structures to fabricate transparent p-n junction. This looks to be a promising approach for realizing low-cost transparent junctions.
Keywords :
II-VI semiconductors; epitaxial growth; lithium compounds; magnesium compounds; nickel compounds; optical fabrication; p-n heterojunctions; photodetectors; platinum; pulsed laser deposition; sapphire; zinc compounds; Al2O3; Li0.15Ni0.85O; MgO; MgO substrate; Pt; Pt contacts; UV-detector applications; ZnO; heteroepitaxial growth; heterojunctions films; n-ZnO films; p-Li0.15Ni0.85O films; pulsed laser deposition; sapphire substrate; transparent conducting oxides; transparent p-n junction fabrication; Fabrication; Gallium nitride; Heterojunctions; Optical films; P-n junctions; Photonic band gap; Pulsed laser deposition; Semiconductor films; Substrates; Zinc oxide;
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN :
0-7803-8974-3
DOI :
10.1109/CLEOE.2005.1568076
