Title :
A graphical analysis of the I-V characteristics of pnpn devices
Author_Institution :
Stanford University, Stanford, CA, USA
Keywords :
Avalanche breakdown; Breakdown voltage; Charge carrier processes; Diodes; Equations; Lead; Space charge;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1966 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1966.1157662
