Title :
A fast, high-gain silicon photodiode
Author_Institution :
Stanford Electronics Labs., Stanford, CA, USA
Keywords :
Breakdown voltage; Capacitance; Charge carrier processes; Frequency response; Ionization; Laboratories; Photodetectors; Photodiodes; Semiconductor diodes; Silicon;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1966 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1966.1157663
