DocumentCode
2898075
Title
Saturation fluence and modulation depth of GaInNAs SESAMs around the band edge for optimal mode locking
Author
Grange, R. ; Rutz, A. ; Liverini, V. ; Haiml, M. ; Schön, S. ; Keller, U.
Author_Institution
Phys. Dept., ETH Zurich, Switzerland
fYear
2005
fDate
12-17 June 2005
Firstpage
301
Abstract
We measured the saturation fluence and modulation depth of 1.3-μm GalnNAs SESAMs around their band edge. A relation between the photoluminescence and the best operation wavelength of GaInNAs SESAMs for cw mode locking is demonstrated.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; mirrors; optical saturable absorption; photoluminescence; semiconductor quantum wells; 1.3 micron; GaInNAs; mode locking saturation; modulation depth; photoluminescence; semiconductor saturable absorber mirror; Absorption; Gain measurement; Laser mode locking; Photoluminescence; Physics; Solid lasers; Tail; Tunable circuits and devices; Ultrafast electronics; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN
0-7803-8974-3
Type
conf
DOI
10.1109/CLEOE.2005.1568085
Filename
1568085
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