Title :
A new, insulated-gate transistor
Author :
Tombs, N. ; Wegener, H. ; Wheeler, R. ; Kenney, B. ; Coppola, A.
Author_Institution :
Sperry Rand Research Center, Sudbury, MA, USA
Keywords :
Dielectric substrates; Diodes; Electrodes; FETs; Fabrication; Insulation; MOS capacitors; Silicon on insulator technology; Surface treatment; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1966 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1966.1157687
