DocumentCode
2898566
Title
An analysis on oxidation, contamination, adhesion, mechanical stress and electro- etching effect toward DIP package delamination
Author
Teng, Wang Hui ; Wei, Heng Chai
Author_Institution
Power Oper. Dev., Infineon Technol. Sdn Bhd, Batu Berendam, Malaysia
fYear
2010
fDate
Nov. 30 2010-Dec. 2 2010
Firstpage
1
Lastpage
5
Abstract
Package delamination forms a separation layer in between mold compound to chip, die paddle and leads, which subsequent affects ground bond quality and degrades package electrical performance. This paper focuses on the interaction relationship of each assembly process towards lead delamination in Dual in Line (DIP) package. No ground bond delamination is allowable to ensure the package robustness. An experiment was conducted to characterize and understand the effect of assembly-induced lead delamination. The identified critical processes include the staging time control from die placement to curing after die bond, contamination of volatile outgassing from epoxy A in poor air oven circulation during epoxy curing, thermal oxidation, mold compound wettability on leadframe during molding, electro-etching effect from deflashing as well as mechanical force from singulation were investigated. Electrolytic deflashing has identified as the primary root cause of lead delamination due to electro etching effect. Secondary factor to further increase the lead delamination is poor mold compound to leadframe adhesion due to imbalance mold flow, mechanical force from singulation and severe copper oxidation. Improved mold tooling concept will be beneficial to further minimize the imbalance mold flow between the top mold and bottom mold. Chemical dipping without electric current is recommended as promising lead delamination results and is reflected in C-SAM (Scanning Acoustic Miscoscope).
Keywords
adhesion; assembling; delamination; electronics packaging; etching; lead bonding; oxidation; surface contamination; C-SAM; DIP package delamination; assembly process; assembly-induced lead delamination; chemical dipping; contamination; copper oxidation; die bond; die paddle; die placement; dual in line package; electro-etching effect; electrolytic deflashing; epoxy curing; ground bond delamination; ground bond quality; imbalance mold flow; interaction relationship; leadframe adhesion; mechanical force; mechanical stress; mold compound wettability; mold tooling concept; molding; package electrical performance; scanning acoustic miscoscope; separation layer; staging time control; thermal oxidation; volatile outgassing; Assembly; Chemicals; Delamination; Lead; Robustness; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Manufacturing Technology Symposium (IEMT), 2010 34th IEEE/CPMT International
Conference_Location
Melaka
ISSN
1089-8190
Print_ISBN
978-1-4244-8825-4
Type
conf
DOI
10.1109/IEMT.2010.5746700
Filename
5746700
Link To Document