• DocumentCode
    2898697
  • Title

    Si-based D-band frequency conversion circuits

  • Author

    Dong-Hyun Kim ; Jongwon Yun ; Jae-Sung Rieh

  • Author_Institution
    Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
  • fYear
    2012
  • fDate
    4-7 Nov. 2012
  • Firstpage
    251
  • Lastpage
    253
  • Abstract
    A review on the Si-based D-band frequency circuits recently developed in Korea University is presented. Low power mixers operating near 140 GHz have been implemented based on SiGe BiCMOS and Si CMOS technologies. A couple of injection-locked frequency dividers with SiGe BiCMOS technology working around 140 GHz, which are intended for wide locking range, have also been fabricated.
  • Keywords
    BiCMOS integrated circuits; CMOS integrated circuits; frequency dividers; low-power electronics; mixers (circuits); BiCMOS technology; D-band frequency conversion circuits; Korea University; SiGe; frequency 140 GHz; injection-locked frequency dividers; low power mixers; wide locking range; CMOS integrated circuits; Mixers; Radio frequency; Silicon; Silicon germanium; Topology; CMOS; SiGe; frequency dividers; mixers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SoC Design Conference (ISOCC), 2012 International
  • Conference_Location
    Jeju Island
  • Print_ISBN
    978-1-4673-2989-7
  • Electronic_ISBN
    978-1-4673-2988-0
  • Type

    conf

  • DOI
    10.1109/ISOCC.2012.6407087
  • Filename
    6407087
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2898697