DocumentCode
2898723
Title
Development of millimeter-wave CMOS power amplifiers at National Taiwan University
Author
Kun-You Lin ; Tian-Wei Huang ; Huei Wang
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2012
fDate
4-7 Nov. 2012
Firstpage
258
Lastpage
261
Abstract
This paper summarizes the developments of millimeter-wave (mmW) CMOS power amplifiers (PAs) at National Taiwan University in recent years. By adopting the power combining techniques such as direct shunt combining, 3-dB coupler combining and transformer combining, several CMOS PAs have successfully developed with good output power from K-band to D-band. Besides, the modified pre-distortion linearizer is used to improve the power performance and power added efficiency (PAE) for a V-band CMOS PA effectively.
Keywords
CMOS analogue integrated circuits; millimetre wave amplifiers; power amplifiers; power combiners; 3-dB coupler combining; D-band; K-band; PAE; V-band CMOS PA; direct shunt combining; millimeter-wave CMOS power amplifier; power added efficiency; power combining technique; predistortion linearizer; transformer combining; CMOS integrated circuits; CMOS technology; Couplers; Gain; K-band; Power amplifiers; Power generation; CMOS; millimeter-wave (mmW); power amplifier (PA);
fLanguage
English
Publisher
ieee
Conference_Titel
SoC Design Conference (ISOCC), 2012 International
Conference_Location
Jeju Island
Print_ISBN
978-1-4673-2989-7
Electronic_ISBN
978-1-4673-2988-0
Type
conf
DOI
10.1109/ISOCC.2012.6407089
Filename
6407089
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