SiGe BiCMOS technology for mm-wave systems

Author

Rucker, Holger ; Heinemann, B.

Author_Institution

IHP, Frankfurt (Oder), Germany

fYear

2012

fDate

4-7 Nov. 2012

Firstpage

266

Lastpage

268

Abstract

This paper reviews a 0.13 μm BiCMOS technology with high-speed SiGe HBTs featuring maximum oscillation frequencies f_max of 500 GHz, transit frequencies f_T of 300 GHz, and CML ring oscillator gate delays of 2.0 ps. The HBTs exhibit breakdown voltages BV_CEO of 1.6 V and BV_CBO of 5.1 V. The improvement of RF performance compared to the preceding HBT generation is attributed to scaled lateral device dimensions, modified vertical doping profiles, a reduced thermal budget, a lower silicide resistance, and a changed wafer orientation.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; bipolar MIMIC; heterojunction bipolar transistors; BiCMOS technology; HBT; SiGe; bipolar MIMIC; frequency 300 GHz; frequency 500 GHz; heterojunction bipolar transistors; ring oscillator gate delays; scaled lateral device dimensions; silicide resistance; size 0.13 mum; thermal budget; vertical doping profiles; voltage 1.6 V; voltage 5.1 V; wafer orientation; BiCMOS integrated circuits; Delay; Heterojunction bipolar transistors; Logic gates; OFDM; Resistance; Silicon germanium; Heterojunction bipolar transistors; millimeter wave bipolar integrated circuits; millimeter wave devices; silicon alloys; silicon bipolar/BiCMOS technology;

fLanguage

English

Publisher

ieee

Conference_Titel

SoC Design Conference (ISOCC), 2012 International

Conference_Location

Jeju Island

Print_ISBN

978-1-4673-2989-7

Electronic_ISBN

978-1-4673-2988-0

Type

conf

DOI

10.1109/ISOCC.2012.6407091

Filename

6407091