Title :
The comparative performance of epitaxial FET´s with junction FET´s and bipolar transistors at VHF
Author_Institution :
Fairchild Semiconductor, Palo Alto, CA, USA
Keywords :
Admittance; Bipolar transistors; Circuit noise; FETs; Frequency; Noise figure; Noise measurement; Performance gain; Semiconductor device noise; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1966 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1966.1157705
