DocumentCode

2898964

Title

The N-channel MOS device as an RF amplifier

Author

Mitchell, Matthew

Author_Institution

Electronic Components and Devices, RCA, Somerville, NJ, USA

Volume

IX

fYear

1966

fDate

9-11 Feb. 1966

Firstpage

108

Lastpage

109

Keywords

Capacitance; Circuit noise; Circuit stability; Equations; Linearity; MOS devices; Radio frequency; Radiofrequency amplifiers; Semiconductor device noise; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1966 IEEE International

Conference_Location

Philadelphia, PA, USA

Type

conf

DOI

10.1109/ISSCC.1966.1157710

Filename

1157710