Title :
The N-channel MOS device as an RF amplifier
Author :
Mitchell, Matthew
Author_Institution :
Electronic Components and Devices, RCA, Somerville, NJ, USA
Keywords :
Capacitance; Circuit noise; Circuit stability; Equations; Linearity; MOS devices; Radio frequency; Radiofrequency amplifiers; Semiconductor device noise; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1966 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1966.1157710
