DocumentCode

2899039

Title

A 150-nanosecond associative memory using integrated MOS transistors

Author

Igarashi, R. ; Kurosawa, T. ; Yaita, T.

Author_Institution

Nippon Electric Co., Ltd. Kawasaki, Japan

Volume

IX

fYear

1966

fDate

9-11 Feb. 1966

Firstpage

104

Lastpage

105

Keywords

Associative memory; Flip-flops; MOSFETs; Protection; Pulse amplifiers; Resistors; Signal generators; Signal to noise ratio; Thin film circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1966 IEEE International

Conference_Location

Philadelphia, PA, USA

Type

conf

DOI

10.1109/ISSCC.1966.1157714

Filename

1157714