Title :
Invited: Amplification and Gunn oscillation in two-valley semiconductors
Author_Institution :
MIT Lincoln Laboratory, Lexington, MA
Keywords :
Blades; Electron devices; Electron mobility; Epitaxial layers; Gallium arsenide; Gunn devices; Iron; Microwave oscillators; Semiconductor diodes; Space charge;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1966 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1966.1157724
