DocumentCode :
2899241
Title :
High energy efficient ultra-low voltage SRAM design: Device, circuit, and architecture
Author :
Kim, Tony T. ; Bo Wang ; Anh Tuan Do
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear :
2012
fDate :
4-7 Nov. 2012
Firstpage :
367
Lastpage :
370
Abstract :
High energy efficient ultra-low voltage SRAMs play a key role in many emerging ultra-low power applications. However, design of SRAMs for reliable ultra-low voltage operation is challenging due to various problems. In this paper, we explore various ultra-low voltage SRAM design techniques for improving energy efficiency. Effect of MTCMOS on energy efficiency improvement, circuit techniques for ultra-low voltage operation, and architectural considerations will be presented.
Keywords :
CMOS memory circuits; SRAM chips; integrated circuit design; low-power electronics; architectural consideration; energy efficiency improvement; multithreshold CMOS; ultra-low power application; ultra-low voltage SRAM design; Circuit stability; Computer architecture; Energy efficiency; Microprocessors; Sensors; MTCMOS; SRAM; SRAM architecture; bitline sensing; energy; ultra-low voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SoC Design Conference (ISOCC), 2012 International
Conference_Location :
Jeju Island
Print_ISBN :
978-1-4673-2989-7
Electronic_ISBN :
978-1-4673-2988-0
Type :
conf
DOI :
10.1109/ISOCC.2012.6407117
Filename :
6407117
Link To Document :
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