Title :
A study of deep body implant into the base of Vertical NPN bipolar transistors
Author :
Chan Lik Tan ; Siong, Cheng Chin ; Reza, Hussein Mohammad ; Siang, Hwang Chee
Author_Institution :
Process Integration Dept, Infineon Technol. (Kulim) Sdn. Bhd., Kulim, Malaysia
fDate :
Nov. 30 2010-Dec. 2 2010
Abstract :
In this paper, we demonstrate the sensitivity of base resistance by different tilt angle of deep body implant into the base of Vertical NPN bipolar transistors. The base resistance in the vertical NPN bipolar transistors shows a strong dependency on the tilt angle of the boron implant from the deep body. We are able to improve the Early voltage (VEA) without degrading the current gain and breakdown voltage of collector and base on an optimal tilt angle of 0 degree.
Keywords :
bipolar transistors; boron; semiconductor device breakdown; B; base resistance; base width modulation; boron implant; breakdown voltage; deep body implant; early voltage; vertical NPN bipolar transistors; Analytical models; Bipolar transistors; Implants; Uninterruptible power systems; Base Width Modulation; Early Voltage; channeling; current gain; tilt angle;
Conference_Titel :
Electronic Manufacturing Technology Symposium (IEMT), 2010 34th IEEE/CPMT International
Conference_Location :
Melaka
Print_ISBN :
978-1-4244-8825-4
DOI :
10.1109/IEMT.2010.5746737
