DocumentCode :
2899292
Title :
Two-dimensional current/voltage measurements of reverse-biased n +-diodes by photoemission
Author :
Ohzone, Takashi ; Iwata, Hideyuki
Author_Institution :
Dept. of Electron. & Inf., Toyama Prefectural Univ., Japan
fYear :
1992
fDate :
16-19 Mar 1992
Firstpage :
34
Lastpage :
38
Abstract :
Two-dimensional (2-D) current/voltage distributions of avalanche-breakdown n+-diodes are discussed by comparing 2-D photoemission-intensity distributions with electrical measurements. It was found that total photoemission-intensities were proportional to the avalanche-breakdown currents, and 2-D current/voltage distributions can be estimated by analyzing 2-D images of photoemission-intensities
Keywords :
avalanche diodes; impact ionisation; photoemission; 2D current/voltage distributions; 2D images; avalanche-breakdown n+-diodes; electrical measurements; photoemission; reverse-biased n+-diodes; Band pass filters; Charge coupled devices; Charge-coupled image sensors; Current measurement; Optical filters; Optical microscopy; Optical variables control; Photoelectricity; Two dimensional displays; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 1992. ICMTS 1992. Proceedings of the 1992 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0535-3
Type :
conf
DOI :
10.1109/ICMTS.1992.185931
Filename :
185931
Link To Document :
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