• DocumentCode
    2899292
  • Title

    Two-dimensional current/voltage measurements of reverse-biased n +-diodes by photoemission

  • Author

    Ohzone, Takashi ; Iwata, Hideyuki

  • Author_Institution
    Dept. of Electron. & Inf., Toyama Prefectural Univ., Japan
  • fYear
    1992
  • fDate
    16-19 Mar 1992
  • Firstpage
    34
  • Lastpage
    38
  • Abstract
    Two-dimensional (2-D) current/voltage distributions of avalanche-breakdown n+-diodes are discussed by comparing 2-D photoemission-intensity distributions with electrical measurements. It was found that total photoemission-intensities were proportional to the avalanche-breakdown currents, and 2-D current/voltage distributions can be estimated by analyzing 2-D images of photoemission-intensities
  • Keywords
    avalanche diodes; impact ionisation; photoemission; 2D current/voltage distributions; 2D images; avalanche-breakdown n+-diodes; electrical measurements; photoemission; reverse-biased n+-diodes; Band pass filters; Charge coupled devices; Charge-coupled image sensors; Current measurement; Optical filters; Optical microscopy; Optical variables control; Photoelectricity; Two dimensional displays; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1992. ICMTS 1992. Proceedings of the 1992 International Conference on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7803-0535-3
  • Type

    conf

  • DOI
    10.1109/ICMTS.1992.185931
  • Filename
    185931
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2899292