Field emission characteristics of oriented AlN thin film on tungsten tip

Author

Yue, Shuanglin ; Gu, Changzhi ; Shi, Chengying ; Zhi, Chunyi

Author_Institution

Inst. of Phys., Chinese Acad. of Sci., Beijing, China

fYear

2004

fDate

6-10 Sept. 2004

Firstpage

81

Lastpage

83

Abstract

By using radio frequency magnetron reactive sputtering system, oriented AlN films with different thickness were deposited on tungsten tips. Compared studies of field emission characteristics were performed between the bare and AlN coated W tips. The results showed that enhanced electron emission can be obtained from oriented AlN film on W tip. The hysteresis behaviors shown in current-electric field (I-E) curves during downward electric field sweeps were observed and the extent of hysteresis in I-E curves strongly depended on the thickness of the AlN films. The stability measurement of field emission current presented that the hysteresis can be attributed to the charging in AlN film as an insulator.

Keywords

III-V semiconductors; aluminium compounds; electric fields; electron field emission; hysteresis; semiconductor thin films; sputtering; tungsten; AlN thin film; W-AlN; current-electric field curves; electric field; field emission characteristics; field emission current; hysteresis behaviors; insulator; oriented AlN films; radio frequency magnetron reactive sputtering system; stability measurement; tungsten tip; Current measurement; Electron emission; Hysteresis; Insulation; Magnetic field measurement; Radio frequency; Sputtering; Stability; Transistors; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electron Sources Conference, 2004. Proceedings. IVESC 2004. The 5th International

Print_ISBN

0-7803-8437-7

Type

conf

DOI

10.1109/IVESC.2004.1414141

Filename

1414141