Title :
Test structures for analysis and parameter extraction of secondary photon-induced leakage currents in CMOS DRAM technology
Author :
Voldman, Steven H.
Author_Institution :
IBM, Essex Junction, VT, USA
Abstract :
A photon-induced leakage current technique to analyze hot carriers is discussed. CMOS photo-leakage test structures were used to determine the spatial dependency of photon-induced leakage current. New trench dynamic RAM (DRAM) test structures were developed for application of the photon-induced leakage technique to analyze hot carriers induced by trench DRAM leakage mechanisms. An analytical model is developed for application of the photon-induced leakage analysis to MOSFET and trench gate-induced diode leakage mechanisms
Keywords :
CMOS integrated circuits; DRAM chips; hot carriers; semiconductor process modelling; CMOS DRAM technology; MOSFET; analytical model; hot carriers; parameter extraction; secondary photon-induced leakage currents; spatial dependency; test structures; trench dynamic RAM; trench gate-induced diode leakage mechanisms; CMOS technology; Electrons; Failure analysis; Hot carriers; Leakage current; MOSFET circuits; Parameter extraction; Photonics; Random access memory; Testing;
Conference_Titel :
Microelectronic Test Structures, 1992. ICMTS 1992. Proceedings of the 1992 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0535-3
DOI :
10.1109/ICMTS.1992.185932
