DocumentCode

2899319

Title

The Influence Of Preoxidation Cleaning Chemistry And Wafer Substrate On Thin Gate Oxide Defect Density

Author

Triplett, B.B. ; Tran, M. ; Aminzadeh, M.

Author_Institution

Intel Corporation

fYear

1992

fDate

25-28 Oct. 1992

Firstpage

92

Lastpage

100

Keywords

Atomic layer deposition; Chemistry; Degradation; Erbium; Hafnium; Quantum mechanics; Rough surfaces; Silicon; Surface cleaning; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Wafer Level Reliability Workshop, 1992. Final Report., 1992 International

Conference_Location

Lake Tahoe, CA, USA

Type

conf

DOI

10.1109/IWLR.1992.657990

Filename

657990