Title :
Low Frequency Noise as a tool to study degradation processes in 4H-SiC p-n junctions
Author :
Rumyantsev, S.L. ; Levinshtein, M.E. ; Shur, M.S. ; Palmour, J.W. ; Agarwal, A.K. ; Das, M.K.
Author_Institution :
Ioffe Physico-Tech. Inst., St. Petersburg, Russia
Abstract :
Studies of forward current stress on the low frequency noise in the 4H-SiC high voltage rectifier p+-n diodes revealed that (a) noise is a more sensitive indicator of degradation than IV characteristics, (b) noise could actually decrease with degradation, and (c) degradation mechanism might be linked to stacking faults.
Keywords :
p-i-n diodes; p-n junctions; rectifiers; silicon compounds; stacking faults; wide band gap semiconductors; 4H-SiC p-n junctions; SiC; degradation mechanism; forward current stress; high-voltage rectifier p+-n diodes; low-frequency noise; stacking faults; Degradation; Light emitting diodes; Low-frequency noise; Semiconductor diodes; Silicon carbide; Stress; burst noise; diode; forward current stress; low frequency noise; silicon carbide; stacking faults;
Conference_Titel :
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4577-0189-4
DOI :
10.1109/ICNF.2011.5994272
