Title :
Comparison of noise characteristics of GaAs and GaN Schottky diodes for millimeter and submillimeter applications
Author :
Pardo, Diego ; Perez, Sandra ; Grajal, Jesús ; Mateos, Javier ; González, Tomás
Author_Institution :
Univ. Politec. de Madrid, Madrid, Spain
Abstract :
A Monte Carlo (MC) analysis of the noise spectra of GaAs and GaN Schottky barrier diodes (SBDs) operating under static and time varying conditions is carry out in this paper. Especial attention is payed to the dependence of the noise spectra with the structure of the diode, temperature and working conditions. Published noise analytical models of SBDs are employed to verify the results obtained from MC simulations.
Keywords :
Monte Carlo methods; Schottky diodes; gallium arsenide; millimetre wave diodes; submillimetre wave diodes; Monte Carlo analysis; Schottky barrier diodes; millimeter applications; noise analytical models; noise spectra; static varying conditions; submillimeter applications; time varying conditions; Analytical models; Gallium arsenide; Gallium nitride; Noise; Resonant frequency; Schottky diodes; Silicon;
Conference_Titel :
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4577-0189-4
DOI :
10.1109/ICNF.2011.5994274
