Title :
A new method and test structure for easy determination of femto-farad on-chip capacitances in a MOS process
Author :
Laquai, Bernd ; Richter, Harald ; Höfflinger, Bemd
Author_Institution :
Inst. for Microelectron., Stuttgart, Germany
Abstract :
A new method and test structure for the easy measurement of on-chip capacitances are described. With relatively simple equipment an accuracy that allows measurements in the femto-farad range can be obtained. Test structures have been realized on a test chip in a 1.2-μm CMOS process in a gate array environment. The accuracy of the method was demonstrated with a comparative measurement of a chip-external 10-pF capacitance with a conventional method. The measurements of on-chip capacitances showed good conformity to simulations. It was shown that the method is well suited for measurements with a digital verification tester and a wafer prober with minimum overhead
Keywords :
CMOS integrated circuits; capacitance measurement; integrated circuit testing; logic arrays; logic testing; 1.2 micron; 10 pF; CMOS process; MOS process; digital verification tester; femto-farad on-chip capacitances; gate array environment; test structure; wafer prober; CMOS technology; Capacitance measurement; Current measurement; Leakage current; MOSFETs; Parasitic capacitance; Semiconductor device measurement; Switches; Testing; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1992. ICMTS 1992. Proceedings of the 1992 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0535-3
DOI :
10.1109/ICMTS.1992.185939
