Inverse modeling for doping profile extraction in the presence of interface traps

Author

Iniewski, K.

Author_Institution

Dept. of Electr. Eng., Toronto Univ., Ont., Canada

fYear

1992

fDate

16-19 Mar 1992

Firstpage

67

Lastpage

72

Abstract

The inverse modeling method for doping profile extraction has been extended to take into account interface trap effects. It is shown that by using both capacitance and conductance measurement data of a MOS capacitor, the doping profile in the surface region can be calculated accurately even if the interface trap density is high. The extraction technique was supported by extensive numerical simulations and experimental results obtained using various nonuniformly doped MOS capacitors

Keywords

capacitance measurement; doping profiles; electric admittance measurement; interface electron states; metal-insulator-semiconductor devices; semiconductor device models; MOS capacitor; capacitance measurement; conductance measurement data; doping profile extraction; interface traps; inverse modeling method; nonuniformly doped; numerical simulations; surface region; Capacitance measurement; Capacitance-voltage characteristics; Data mining; Density measurement; Doping profiles; Frequency measurement; Inverse problems; MOS capacitors; Pulse measurements; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1992. ICMTS 1992. Proceedings of the 1992 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0535-3

Type

conf

DOI

10.1109/ICMTS.1992.185940

Filename

185940