Title :
Inverse modeling for doping profile extraction in the presence of interface traps
Author_Institution :
Dept. of Electr. Eng., Toronto Univ., Ont., Canada
Abstract :
The inverse modeling method for doping profile extraction has been extended to take into account interface trap effects. It is shown that by using both capacitance and conductance measurement data of a MOS capacitor, the doping profile in the surface region can be calculated accurately even if the interface trap density is high. The extraction technique was supported by extensive numerical simulations and experimental results obtained using various nonuniformly doped MOS capacitors
Keywords :
capacitance measurement; doping profiles; electric admittance measurement; interface electron states; metal-insulator-semiconductor devices; semiconductor device models; MOS capacitor; capacitance measurement; conductance measurement data; doping profile extraction; interface traps; inverse modeling method; nonuniformly doped; numerical simulations; surface region; Capacitance measurement; Capacitance-voltage characteristics; Data mining; Density measurement; Doping profiles; Frequency measurement; Inverse problems; MOS capacitors; Pulse measurements; Substrates;
Conference_Titel :
Microelectronic Test Structures, 1992. ICMTS 1992. Proceedings of the 1992 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0535-3
DOI :
10.1109/ICMTS.1992.185940
