Title :
An analytical strategy for fast extraction of MOS transistor DC parameters applied to the SPICE M)53 and BSIM models
Author :
Karlsson, Peter R. ; Jeppson, Kjell O.
Author_Institution :
Dept. of Solid State Electron., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
A general strategy for direct extraction of MOS transistor DC parameters using only a small number of data points has been developed. This extraction algorithm has been implemented for two semi-empirical SPICE MOS transistor models, MOS3 and BSIM. Fifteen data points were used to determine the ten MOS3 transistor parameters while 25 data points were used to determine the 20 BSIM parameters. It was possible to obtain good agreement between measured and simulated characteristics. It was also shown that series resistance independent parameters can be extracted with a direct parameter extraction algorithm
Keywords :
SPICE; insulated gate field effect transistors; semiconductor device models; BSIM models; DC parameters; MOS transistor; MOS3 model; SPICE; data points; direct parameter extraction algorithm; series resistance; transistor models; transistor parameters; Data mining; Equations; Geometry; MOSFETs; Noise measurement; Parameter extraction; Production control; SPICE; Solid state circuits; Threshold voltage;
Conference_Titel :
Microelectronic Test Structures, 1992. ICMTS 1992. Proceedings of the 1992 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0535-3
DOI :
10.1109/ICMTS.1992.185942
