Test structures and measurement techniques for the characterization of the dynamic behaviour of CMOS transistors on wafer in the GHz range

Author

Hänseler, Josef ; Schinagel, Helmut ; Zapf, Hans L.

Author_Institution

Siemens AG, Munich, Germany

fYear

1992

fDate

16-19 Mar 1992

Firstpage

90

Lastpage

93

Abstract

For high-precision modeling of dynamic transistor characteristics, the voltage dependence of the transistor capacitances has to be measured at different operating points and different frequencies. Test structures and measurement techniques are described which were used to determine the dynamic characteristics of CMOS transistors in the frequency range up to several gigahertz. By the application of a network analyzer, two measurement ports and multiple DC-biasing possibilities allow the determination of MOS transistor capacitances with all their voltage dependences. Layout and measurement results are presented

Keywords

CMOS integrated circuits; insulated gate field effect transistors; network analysers; semiconductor device models; semiconductor device testing; solid-state microwave devices; CMOS transistors; dynamic behaviour; high-precision modeling; measurement ports; measurement techniques; multiple DC-biasing possibilities; network analyzer; operating points; test structures; transistor capacitances; voltage dependences; Capacitance measurement; Frequency measurement; MOSFETs; Measurement techniques; Microwave measurements; Parasitic capacitance; Pins; Probes; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1992. ICMTS 1992. Proceedings of the 1992 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0535-3

Type

conf

DOI

10.1109/ICMTS.1992.185944

Filename

185944