Title :
Low-frequency noise in triple-gate n-channel bulk FinFETs
Author :
Simoen, E. ; Aoulaiche, M. ; Collaert, N. ; Claeys, C.
Author_Institution :
Imec, Leuven, Belgium
Abstract :
The noise in n-channel bulk MuGFETs with 2.5 nm SiON gate dielectric is reported. It is shown that besides number fluctuations-related 1/f noise often Generation-Recombination (GR) noise is observed. From a detailed study of the fin length and width dependence it is concluded that the GR noise preferentially occurs for short and wide transistors. The latter observation points to traps in the gate oxide edges as a possible source of the excess noise.
Keywords :
1/f noise; MOSFET; semiconductor device noise; silicon; silicon compounds; silicon-on-insulator; 1/f noise; GR noise; SiON; SiON gate dielectric; fin length; gate oxide; generation-recombination noise; low-frequency noise; multiple-gate transistor; n-channel bulk MuGFET; size 2.5 nm; triple-gate n-channel bulk FinFET; FinFETs; Logic gates; Low-frequency noise; Silicon; Silicon on insulator technology; 1/f noise; GR noise; bulk MuGFETs;
Conference_Titel :
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4577-0189-4
DOI :
10.1109/ICNF.2011.5994280
